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| BC 817W / BC 818W NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 20.1 0.3 3 225 mW SOT-323 0.01 g 10.1 1.250.1 Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Type Code 1 2 1.3 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (DC) Peak Coll. current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open B shorted E open C open VCE0 VCES VCB0 VEB0 Ptot IC ICM IBM - IEM Tj TS 2.10.1 Grenzwerte (TA = 25/C) BC 817W 45 V 50 V 50 V 5V 225 mW 1) 500 mA 1000 mA 200 mA 1000 mA 150/C - 65...+ 150/C BC 818W 25 V 30 V 30 V Characteristics, Tj = 25/C Min. DC current gain - Kollektor-Basis-Stromverhaltnis VCE = 1 V, IC = 100 mA VCE = 1 V, IC = 500 mA VCE = 1 V, IC = 100 mA BC817W BC818W Group -16W Group -25W Group -40W hFE hFE hFE hFE hFE 100 40 100 160 250 Kennwerte, Tj = 25/C Typ. - - 160 250 400 Max. 600 - 250 400 600 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 8 General Purpose Transistors Characteristics, Tj = 25/C Min. Collector saturation voltage - Kollektor-Sattigungsspg. IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA Base-Emitter voltage - Basis-Emitter-Spannung VCE = 1 V, - IC = 500 mA IE = 0, VCB = 20 V IE = 0, VCB = 20 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 4 V Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking of available current gain groups per type Stempelung der lieferbaren Stromverstarkungsgruppen pro Typ BC 817-16W = 6A BC 817W = 6D BC 818-16W = 6E BC 818W = 6H BC 818-25W = 6F BC 817W / BC 818W Kennwerte, Tj = 25/C Typ. - - - - - - 170 MHz 6 pF Max. 0.7 V 1.2 V 1.2 V 100 nA 5 :A 100 nA - - 620 K/W 1) VCEsat VBEsat VBE ICB0 ICB0 IEB0 fT CCB0 - - - - - - 100 MHz - RthA Base saturation voltage - Basis-Sattigungsspannung Collector-Base cutoff current - Kollektorreststrom Collector-Base Capacitance - Kollektor-Basis-Kapazitat BC 807W / BC 808W BC 817-25W = 6B BC 817-40W = 6C BC 818-40W = 6G 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 9 |
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